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| HBAT-5400, 5402, 540B, 540C HighPerformanceSchottkyDiode forTransientSuppression Data Sheet Description The HBAT-540x series of Schottky diodes, commonly referredtoasclipping /clampingdiodes,areoptimalfor circuit and waveshape preservation applications with high speed switching. Low series resistance, R S, makes them ideal for protecting sensitive circuit elements against high current transients carried on data lines. Withpicosecondswitching,theHBAT-540xcanrespond tonoisespikeswithrisetimesasfastas1ns.Lowcapacitanceminimizeswaveshapelossthatcausessignaldegradation. Features * Ultra-lowSeriesResistanceforHigherCurrent Handling * LowCapacitance * LowSeriesResistance * Lead-freeOptionAvailable Applications RFandcomputerdesignsthatrequirecircuitprotection, high-speedswitching,andvoltageclamping. Package Lead Code Identification (Top View) SINGLE 3 SERIES 3 1 0, B 2 1 2, C 2 COMMON ANODE 3 COMMON CATHODE 3 1 E 2 1 F 2 Absolute Maximum Ratings, TA= 25C Symbol I F IF- peak PT PINV TJ TSTG JC Parameter DCForwardCurrent PeakSurgeCurrent(1spulse) TotalPowerDissipation PeakInverseVoltage JunctionTemperature StorageTemperature ThermalResistance,junctiontolead Unit mA A mW V C C C/W Absolute Maximum [1] HBAT-5400/-5402 HBAT-540B/-540C 0 1.0 50 30 150 -65to150 500 430 1.0 85 30 150 -65to150 150 Note: 1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothedevice. Linear and Non-linear SPICE Model[2] 0.08 pF SPICE Parameters Parameter BV CJO EG IBV IS N RS PB PT M Unit V pF eV A A V Value 40 3.0 0.55 10E-4 1.0E-7 1.0 .4 0.6 0.5 2 nH RS SPICE model Note: . ToeffectivelymodelthepackagedHBAT-540xproduct,pleasereferto ApplicationNoteAN114. HBAT-540x DC Electrical Specifications, TA = +25C[1] Part Number HBAT-Code [2] Package Marking Lead Code Configuration V0 V 0 B C Maximum Forward Voltage VBR (V) Minimum Breakdown Voltage C T (pF) Typical Capacitance R S () Typical Series Resistance t (ps) Maximum Eff. Carrier Lifetime Package Single Series VF (mV) SOT-3 SOT-33 (3-leadSC-70) SOT-3 SOT-33 (3-leadSC-70) -5400 -540B -540 -540C 800 [3] 30[4] 3.0[5] .4 100[6] Notes: 1. TA=+5C,whereTAisdefinedtobethetemperatureatthepackagepinswherecontactismadetothecircuitboard. . Packagemarkingcodeislasermarked. 3. IF=100mA;100%tested 4. IR=100A;100%tested 5.VF=0;f=1MHz 6. MeasuredwithKarkauermethodat0mAguaranteedbydesign. Typical Performance IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) 100 TJ - JUNCTION TEMPERATURE (C) 300 500 100 160 Max. safe junction temp. 140 120 100 80 60 40 20 0 0 50 100 TA = +75C TA = +25C TA = -25C 150 200 250 IF - FORWARD CURRENT (mA) 10 10 1 1 0.1 0.01 TA = +75C TA = +25C TA = -25C 0 0.1 0.2 0.3 0.4 0.5 0.6 VF - FORWARD VOLTAGE (V) 0.1 0.01 TA = +75C TA = +25C TA = -25C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IF - FORWARD CURRENT (mA) Figure 1. Forward Current vs. Forward Voltage at Temperature for HBAT-5400 and HBAT-5402. Figure 2. Forward Current vs. Forward Voltage at Temperature for HBAT-540B and HBAT-540C. Figure 3. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-5400 and HBAT-5402. Note: Data is calculated from SPICE parameters. Tj - JUNCTION TEMPERATURE (C) 160 Max. safe junction temp. 140 120 100 80 60 40 20 0 0 100 200 300 TA = +75C TA = +25C TA = -25C 400 500 600 IF - FORWARD CURRENT (mA) CT - TOTAL CAPACITANCE (pF) 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 VR - REVERSE VOLTAGE (V) Figure 4. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-540B and HBAT-540C. Note: Data is calculated from SPICE parameters. Figure 5. Total Capacitance vs. Reverse Voltage. Device Orientation For Outlines SOT-23/323 REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" represents date code. 3 Package Dimensions Outline SOT-23 e2 e1 Recommended PCB Pad Layout for Avago's SOT-23 Products 0.039 1 0.039 1 E XXX e E1 0.079 2.0 L B D SYMBOL A A1 B C D E1 e e1 e2 E L C DIMENSIONS (mm) MIN. 0.79 0.000 0.37 0.086 2.73 1.15 0.89 1.78 0.45 2.10 0.45 MAX. 1.20 0.100 0.54 0.152 3.13 1.50 1.02 2.04 0.60 2.70 0.69 0.035 0.9 0.031 0.8 Dimensions in inches mm A A1 Notes: XXX-package marking Drawings are not to scale Tape Dimensions and Product Orientation For Outline SOT-23 P D P2 E P0 F W t1 D1 9 MAX Ko 8 MAX 13.5 MAX A0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2 SIZE (mm) 3.15 0.10 2.77 0.10 1.22 0.10 4.00 0.10 1.00 + 0.05 1.50 + 0.10 4.00 0.10 1.75 0.10 8.00 +0.30 -0.10 0.229 0.013 3.50 0.05 2.00 0.05 B0 SIZE (INCHES) 0.124 0.004 0.109 0.004 0.048 0.004 0.157 0.004 0.039 0.002 0.059 + 0.004 0.157 0.004 0.069 0.004 0.315 +0.012 -0.004 0.009 0.0005 0.138 0.002 0.079 0.002 PERFORATION CARRIER TAPE DISTANCE BETWEEN CENTERLINE 4 Package Dimensions Outline SOT-323 (SC-70 3 Lead) e1 Recommended PCB Pad Layout for Avago's SC70 3L/SOT-323 Products 0.026 E XXX e E1 L B D SYMBOL A A1 B C D E1 e e1 E L C DIMENSIONS (mm) MIN. MAX. 0.80 1.00 0.00 0.10 0.15 0.40 0.10 0.20 1.80 2.25 1.10 1.40 0.65 typical 1.30 typical 1.80 2.40 0.425 typical 0.079 0.039 A 0.022 Dimensions in inches A1 Notes: XXX-package marking Drawings are not to scale Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead) P P0 E D P2 F W C t1 (CARRIER TAPE THICKNESS) D1 Tt (COVER TAPE THICKNESS) 8 MAX. K0 8 MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.254 0.02 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05 SIZE (INCHES) 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.0100 0.0008 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE 5 Applications Information Schottky Diode Fundamentals The HBAT-540x series of clipping/clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductorcontactformedbetweenametal and an n-doped or a p-doped semiconductor.When a metal-semiconductorjunctionisformed,freeelectrons flowacrossthejunctionfromthesemiconductorandfill thefree-energystatesinthemetal.Thisflowofelectrons createsadepletionorpotentialacrossthejunction.The differenceinenergylevelsbetweensemiconductorand metaliscalledaSchottkybarrier. P-doped, Schottky-barrier diodes excel at applications requiringultralowturn-onvoltage(suchaszero-biased RF detectors). But their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. Therefore, this discussion will focus entirely on n-doped Schottky diodes. Underaforwardbias(metalconnectedtopositiveinan n-dopedSchottky),orforwardvoltage,VF,therearemany electronswithenoughthermalenergytocrossthebarrier potentialintothemetal.Oncetheappliedbiasexceeds thebuilt-inpotentialofthejunction,theforwardcurrent, IF,willincreaserapidlyasVFincreases. WhentheSchottkydiodeisreversebiased,thepotential barrier for electrons becomes large; hence, there is a small probability that an electron will have sufficientthermalenergytocrossthejunction.Thereverse leakagecurrentwillbeinthenanoamperetomicroampererange,dependinguponthediodetype,thereverse voltage,andthetemperature. In contrast to a conventional p-n junction, current in the Schottky diode is carried only by majority carriers. Because no minority carrier charge storage effects are present, Schottky diodes have carrier lifetimes of less than 100ps and are extremely fast switching semiconductors. Schottky diodes are used as rectifiers at f requenciesof50GHzandhigher. Another significant difference between Schottky and p-ndiodesistheforwardvoltagedrop.Schottkydiodes haveathresholdoftypically0.3Vincomparisontothat of0.6Vinp-njunctiondiodes.SeeFigure6. CAPACITANCE P N METAL N CURRENT CAPACITANCE CURRENT 0.6 V 0.3 V - + - + BIAS VOLTAGE BIAS VOLTAGE PN JUNCTION SCHOTTKY JUNCTION Figure 6. Throughthecarefulmanipulationofthediameterofthe Schottkycontactandthechoiceofmetaldepositedon then-dopedsilicon,theimportantcharacteristicsofthe diode (junction capacitance, C J; parasitic series resistance,RS;breakdownvoltage,VBR;andforwardvoltage, VF,)canbeoptimizedforspecificapplications.TheHSMS70xseriesandHBAT-540xseriesofdiodesareacasein point. Both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current,IS.Yet,differentcontactdiametersandepitaxiallayerthicknessresultinverydifferentvaluesofjunction capacitance, C J and RS.This is portrayed by their SPICE parametersinTable1. Table 1. HBAT-540x and HSMS-270x SPICE Parameters. Parameter BV CJ0 EG IBV IS N RS PB PT M HBAT-540x 40V 3.0pF 0.55eV 10E-4A 1.0E-7A 1.0 .4 0.6V 0.5 HSMS-270x 5V 6.7pF 0.55eV 10E-4A 1.4E-7A 1.04 0.65 0.6V 0.5 At low values of IF 1 mA, the forward voltages of the twodiodesarenearlyidentical.However,ascurrentrises above 10mA, the lower series resistance of the HSMS70xallowsforamuchlowerforwardvoltage.Thisgives theHSMS-70xamuchhighercurrenthandlingcapability.Thetrade-offisahighervalueofjunctioncapacitance. TheforwardvoltageandcurrentplotsillustratethedifferencesinthesetwoSchottkydiodes,asshowninFigure 7. 6 300 100 I F - FORWARD CURRENT (mA) HSMS-270x HBAT-540x 10 1 Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is maintained at or below 150C, although brief excursions to higherjunctiontemperaturescanbetoleratedwithno significant impact upon mean-time-to-failure, MTTF. In order to compute the junction temperature, Equations (1)and(3)belowmustbesimultaneouslysolved. 11600 (V F - I F R S ) .1 .01 0 0.1 0.2 0.3 0.4 0.5 0.6 IF = IS e nT J -1 (1) VF - FORWARD VOLTAGE (V) Figure 7. Forward Current vs. Forward Voltage at 25C. Figure 7. Forward Current vs. Forward Voltage at 25C. Becausetheautomatic,pick-and-placeequipmentused to assemble these products selects dice from adjacent sitesonthewafer,thetwodiodeswhichgointotheHBAT540 or HBAT-540C (series pair) are closely matched -- withouttheaddedexpenseoftestingandbinning. 2 1 1 T J n -4060 T J - 298 IS = I0 e 298 (2) (3) TJ = V F I F JC + TA where: I F=forwardcurrent IS=saturationcurrent VF=forwardvoltage RS=seriesresistance TJ=junctiontemperature IO=saturationcurrentat5C n=diodeidealityfactor JC=thermalresistancefromjunctiontocase (diodelead) =package+chip T A=ambient(diodelead)temperature Equation(1)describestheforwardV-IcurveofaSchottky diode.Equation()providesthevalueforthediode'ssaturationcurrent,whichvalueispluggedinto(1).Equation (3)givesthevalueofjunctiontemperatureasafunction of power dissipated in the diode and ambient (lead) temperature. 6 Current Handling in Clipping/Clamping Circuits Thepurposeofaclipping/clampingdiodeistohandle high currents, protecting delicate circuits downstream of the diode. Current handling capacity is determined bytwosetsofcharacteristics,thoseofthechipordevice itselfandthoseofthepackageintowhichitismounted. noisy data-spikes current limiting Vs long cross-site cable pull-down (or pull-up) 0V voltage limited to Vs + Vd 0V - Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. Consider the circuit shown in Figure 8, in which two Schottkydiodesareusedtoprotectacircuitfromnoise spikesonastreamofdigitaldata.Theabilityofthediodes tolimitthevoltagespikesisrelatedtotheirabilitytosink theassociatedcurrentspikes.Theimportanceofcurrent h andlingcapacityisshowninFigure9,wheretheforward voltagegeneratedbyaforwardcurrentiscomparedin twodiodes.ThefirstisaconventionalSchottkydiodeof thetypegenerallyusedinRFcircuits,withanRSof7.7. ThesecondisaSchottkydiodeofidenticalcharacteristics,savetheR Sof1.0.Fortheconventionaldiode,the relativelyhighvalueofRScausesthevoltageacrossthe diode'sterminalstoriseascurrentincreases.Thepower dissipatedinthediodeheatsthejunction,causingRSto climb,givingrisetoarunawaythermalcondition.Inthe seconddiodewithlowRS,suchheatingdoesnottake placeandthevoltageacrossthediodeterminalsismaintainedatalowlimitevenathighvaluesofcurrent. 7 VF - FORWARD VOLTAGE (V) 5 4 3 2 1 0 Rs = 1.0 Rs = 7.7 0 0.1 0.2 0.3 0.4 0.5 IF - FORWARD CURRENT (mA) Figure 9. Comparison of Two Diodes. Figure 9. Comparison of Two Diodes. Thekeyfactorsintheseequationsare:RS,theseriesresistance of the diode where heat is generated under high current conditions; chip, the chip thermal resistance of the Schottky die; and package, or the package thermal r esistance. RS for the HBAT-540x family of diodes is typically .4, other than the HSMS-70x family, this is the lowest of anySchottkydiodeavailable.Chipthermalresistanceis typically40C/W;thethermalresistanceoftheiron-alloyleadframe,SOT-3packageistypically460C/W;andthe thermal resistance of the copper-leadframe, SOT-33 package is typically 110C/W. The impact of package thermal resistance on the current handling capability ofthesediodescanbeseeninFigures3and4.Herethe computed values of junction temperature vs. forward currentareshownforthreevaluesofambienttemperature.TheSOT-33products,withtheircopperleadframes, cansafelyhandlealmosttwicethecurrentofthelarger SOT-3diodes.Notethattheterm"ambienttemperature" referstothetemperatureofthediode'sleads,nottheair around the circuit board. It can be seen that the HBAT540B and HBAT-540C products in the SOT-33 package willsafelywithstandasteady-stateforwardcurrentof330 mAwhenthediode'sterminalsaremaintainedat75C. Forpulsedcurrentsandtransientcurrentspikesofless than one microsecond in duration, the junction does nothavetimetoreachthermalsteadystate.Moreover, thediodejunctionmaybetakentotemperatureshigher than 150C for short timeperiods without impacting device MTTF. Because of these factors, higher currents can be safely handled. The HBAT-540x family has the secondhighestcurrenthandlingcapabilityofanyAvago diode,nexttotheHSMS-70xseries. Part Number Ordering Information Part Number HBAT-5400-BLKG HBAT-5400-TR1G HBAT-5400-TRG HBAT-540-BLKG HBAT-540-TR1G HBAT-540-TRG HBAT-540B-BLKG HBAT-540B-TR1G HBAT-540B-TRG HBAT-540C-BLKG HBAT-540C-TR1G HBAT-540C-TRG No. of Devices 100 3,000 10,000 100 3,000 10,000 100 3,000 10,000 100 3,000 10,000 Container AntistaticBag 7"Reel 13"Reel AntistaticBag 7"Reel 13"Reel AntistaticBag 7"Reel 13"Reel AntistaticBag 7"Reel 13"Reel Forproductinformationandacompletelistofdistributors,pleasegotoourwebsite:www.avagotech.com Avago,AvagoTechnologies,andtheAlogoaretrademarksofAvagoTechnologiesintheUnitedStatesandothercountries. Datasubjecttochange.Copyright(c)2005-2008AvagoTechnologies.Allrightsreserved.Obsoletes5989-4779EN AV02-1394EN-July4,2008 |
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